ODIS Inc., with its R&D facilities located on the campus of the University of Connecticut, has developed and proven a new semiconductor process based on a new Group III-V materials system. This process, POET (Planar OptoElectronic Technology), is uniquely capable of producing monolithic IC solutions to meet the emerging needs of these emerging markets. POET allows ODIS to produce ICs with dense packing of active optical elements together with packing of high-performance electronic elements at a density similar to that of silicon. These monolithic implementations have a large advantage over today’s hybrid-based solutions in density, reliability, and power dissipation, at a cost much lower than the best available competitors. ODIS will produce a market dislocation by providing monolithic IC components for these high volume high-performance markets with high-reliability, smaller, lower-power components at disruptively lower prices.POET is differentiated from competing semiconductor processes, silicon, gallium arsenide, or indium phosphide by its more comprehensive set of elemental capabilities, and its ability to integrate them. POET can integrate lasers, modulators, photoreceivers, passive optics and high-speed, low-power electronics in monolithically-fabricated die: no other existing process can do so. This gives ODIS ICs their much lower cost structure, power savings and increased reliability. Patent and trade secret protection on POET, plus ODIS’s specific design knowledge using POET elements give ODIS a large, defensible barrier to competition.